The PLD system is mainly composed by laser, optical lens, deposition system, etc. The working principle is that the target is ablated by high-energy pulsed laser, and atoms, molecules and ions emitted vertically from the target and deposited on the single crystal substrate to form a thin film.

1. The PLD chamber has flange ports for substrate heater assembly, target assembly, laser ports, side view ports, vacuum gauge, in-situ optical characterization, and gas inlet.

2. Removable mechanical clip target holders (1” dia x quantity 6 and 2” dia x quantity 3) will be supplied in which targets can be mounted without use of silver paste or ink.

3. 2.2 inch diameter Inconel substrate heater with, embedded thermocouple, electrical and thermocouple feedthrough.

4. Gas Flow

5. Gas Pressure Display

1. Substrate heater is capable of reaching 850 ˚C in vacuum and reactive atmosphere (O₂,NH₃) up to 760 Torr (1 atm.).

2. One full range cold cathode gauge (range 1E-8 – 760 Torr (1 atm.)) and digital display.

Equipment number: combi-HR-1

Laser-MBE system belongs to the third generation high-throughput combinatorial film preparation system. Basically, this system sputters target material composition to the substrate in the use of high-energy pulsed laser during the epitaxial growth. The adoption of movable masks makes continuous-gradient-component thin film possible, which greatly improves the efficiency of thin film growth and benefits exploration and study of the physical properties of new materials.

The use of a movable mask let the deposition of component A distribute gradiently on the substrate surface. Then we do the same for component B but in the opposite direction. Finally we get uniform thin film whose components varying from A to B gradiently.

1. Software of "PLD Controller" for deposition chamber.

2. Six targets operating system.

3. The substrate plate can be rotated 360 degrees and heated uniformly by a semiconductor laser.

4. Scanning dual carrier differential electron gun.

5. Dual axis linear motion mask system.

6. Load interlock transfer vacuum chamber.

1. Vacuum degree can be up to 5.0E-9 torr or less.

2. There are six 1-inch target positions that can 360 degree rotate and revolve, twist.

3. The heating temperature of laser diode substrate can reach 1100 ℃, and the accuracy is +/-1 ℃. 10mmx10mm sample can be heated.

4. The differential reflection high-energy electron diffraction can observe diffraction images above 100mTorr.

5. The dual axis linear motion mask system can grow 2, 3-membered and quasi 4-membered thin film and moved by motor which the accuracy is better than 100 μm.

6. The transfer vacuum chamber can store 2 samples and 4 targets, which can be linearly transferred to the growth chamber by magnetic sample transfer rod.

Equipment number: combi-HR-2
Laser-MBE system belongs to the third generation high-throughput combinatorial film preparation system. Basically, this system sputters target material composition to the substrate in the use of high-energy pulsed laser during the epitaxial growth. The adoption of movable masks makes continuous-gradient-component thin film possible, which greatly improves the efficiency of thin film growth and benefits exploration and study of the physical properties of new materials.
The use of a movable mask let the deposition of component A distribute gradiently on the substrate surface. Then we do the same for component B but in the opposite direction. Finally we get uniform thin film whose components varying from A to B gradiently.

1. Software of "PLD Controller" for deposition chamber.
2. Six targets operating system.
3. The substrate plate can be rotated 360 degrees and heated uniformly by a semiconductor laser.
4. Dual axis linear motion mask system.
5. Load interlock transfer vacuum chamber.

1. Vacuum degree can be up to 5.0E-9 torr or less.
2. There are six 1-inch target positions that can 360 degree rotate and revolve, twist.
3. The heating temperature of laser diode substrate can reach 1100 ℃, and the accuracy is +/-1 ℃. 10mmx10mm sample can be heated.
4. The dual axis linear motion mask system can grow 2, 3-membered and quasi 4-membered thin film and moved by motor which the accuracy is better than 100 μm.
5. The transfer vacuum chamber can store 2 samples and 4 targets, which can be linearly transferred to the growth chamber by magnetic sample transfer rod.

Equipment number: combi-HR-3
Laser-MBE system belongs to the third generation high-throughput combinatorial film preparation system. Basically, this system sputters target material composition to the substrate in the use of high-energy pulsed laser during the epitaxial growth. The adoption of movable masks makes continuous-gradient-component thin film possible, which greatly improves the efficiency of thin film growth and benefits exploration and study of the physical properties of new materials.
The use of a movable mask let the deposition of component A distribute gradiently on the substrate surface. Then we do the same for component B but in the opposite direction. Finally we get uniform thin film whose components varying from A to B gradiently.

1. Software of "PLD Controller" for deposition chamber.
2. Six targets operating system.
3. The substrate plate can be rotated 360 degrees and heated uniformly by a semiconductor laser.
4. Dual axis linear motion mask system.
5. Load interlock transfer vacuum chamber.

1. Vacuum degree can be up to 5.0E-9 torr or less.
2. There are six 1-inch target positions that can 360 degree rotate and revolve, twist.
3. The heating temperature of laser diode substrate can reach 1100 ℃, and the accuracy is +/-1 ℃. 10mmx10mm sample can be heated.
4. The dual axis linear motion mask system can grow 2, 3-membered and quasi 4-membered thin film and moved by motor which the accuracy is better than 100 μm.
5. The transfer vacuum chamber can store 2 samples and 4 targets, which can be linearly transferred to the growth chamber by magnetic sample transfer rod.

Vacuum chamber system for in-situ sample transfer.

Vacuum degree: less than 3E-6 Pa.

The vacuum transfer chamber is equipped with ion pump that can maintain high vacuum during transfer.

ICF114(CF63) connects film chamber and in-situ measurement equipment.